GSD-2021-42114
Vulnerability from gsd - Updated: 2023-12-13 01:23Details
Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.
Aliases
Aliases
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"description": "Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.",
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"value": "Using ECC DRAM substantially increases the difficulty of carrying out Rowhammer attacks on systems, although previous work [1] showed that it does not provide complete protection.\n\n[1] L. Cojocar, K. Razavi, C. Giuffrida, and H. Bos, \u201cExploiting Correcting Codes: On the Effectiveness of ECC Memory Against Rowhammer Attacks,\u201d San Francisco, CA, USA, May 2019, pp. 55\u201371. DOI: 10.1109/SP.2019.00089. "
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Sightings
| Author | Source | Type | Date |
|---|
Nomenclature
- Seen: The vulnerability was mentioned, discussed, or observed by the user.
- Confirmed: The vulnerability has been validated from an analyst's perspective.
- Published Proof of Concept: A public proof of concept is available for this vulnerability.
- Exploited: The vulnerability was observed as exploited by the user who reported the sighting.
- Patched: The vulnerability was observed as successfully patched by the user who reported the sighting.
- Not exploited: The vulnerability was not observed as exploited by the user who reported the sighting.
- Not confirmed: The user expressed doubt about the validity of the vulnerability.
- Not patched: The vulnerability was not observed as successfully patched by the user who reported the sighting.
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